GaN 器件第三象限导通特性
2025-11-16 14:35 斑鸠，一生。 阅读(0) 评论(0) 收藏 举报一、原理
The condition to turn on the channel for reverse conduction is the gate to drain voltage Vgd is higher than the threshold voltage (VGS(th)).
二、特性
GaN 器件第三象限导通特性
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The condition to turn on the channel for reverse conduction is the gate to drain voltage Vgd is higher than the threshold voltage (VGS(th)).